Unusual conduction mechanism of n-type β-Ga2O3: A shallow donor electron paramagnetic resonance analysis
Author:
Affiliation:
1. Institut des NanoSciences de Paris, Sorbonne Université, UMR 7588 au CNRS 4, place Jussieu, 75005 Paris, France
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0023546
Reference24 articles.
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5. Oxygen vacancies and donor impurities in β-Ga2O3
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3. High temperature annealing of n-type bulk β-Ga2O3: Electrical compensation and defect analysis—The role of gallium vacancies;Journal of Applied Physics;2023-10-24
4. Role of carbon and hydrogen in limiting n -type doping of monoclinic (AlxGa1−x)2O3;Physical Review B;2022-04-04
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