Shallow and deep donors in direct-gapn-typeAlxGa1−xAs:Sigrown by molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.7021/fulltext
Reference28 articles.
1. Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy
2. Investigation of persistent photoconductivity in Si-dopedn-Al x Ga1?x as grown by molecular beam epitaxy
3. Si and Sn Doping in AlxGa1-xAs Grown by MBE
4. Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy
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