Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As-Reference-Cited by-同舟云学术

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Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

Published:2020-09 Issue:9 Volume:6 Page:e04852
ISSN:2405-8440
Container-title:Heliyon
language:en
Short-container-title:Heliyon

Author:

Al-Ahmadi Noorah Ahmed

Publisher

Elsevier BV

Subject

Multidisciplinary

Reference38 articles.

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2. GaAs MOS capacitors with photo-CVD SiO2 insulator layers;Liu;Solid State Electron.,2005

3. Barrier height engineering on GaAs THz Schottky diodes by means of high-low doping, InGaAs-and InGaP-layers;Sassen;IEEE Trans. Electron. Dev.,2000

4. Nanoscale GaAs metal–semiconductor–metal photodetectors fabricated using nanoimprint lithography;Yu;Appl. Phys. Lett.,1999

5. The voltage–current characteristic of metal–semiconductor contacts;Padovani;Semiconduct. Semimet.,1971

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