Modification of barrier height inhomogeneity in the presence of titanium dioxide nanoparticles on Carmoisine dye-based Schottky device-Reference-Cited by-同舟云学术

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Modification of barrier height inhomogeneity in the presence of titanium dioxide nanoparticles on Carmoisine dye-based Schottky device

Published:2024-03 Issue: Volume:46 Page:103952
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Karan Arnab Kanti^ORCID,Sahoo Dipankar,Sen Sudipta,Rakshit Subhra,Manik Nabin Baran

Publisher

Elsevier BV

Reference48 articles.

1. Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces;Roul;AIP Adv.,2015

2. Barrier inhomogeneities at Schottky contacts;Werner;J. Appl. Phys.,1991

3. Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As;Al-Ahmadi;Heliyon,2020

4. Altındal, Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity;Çetinkaya;J. Alloys Compd.,2017

5. The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes;Cetin;Semicond. Sci. Technol.,2004

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1. Analysis of temperature-dependent current–voltage characteristics of Schottky diodes by the modified thermionic emission current model;Journal of Vacuum Science & Technology B;2024-03-28

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