Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/3/1.4916264.pdf?itemId=/content/aip/journal/adva/5/3/10.1063/1.4916264&mimeType=pdf&containerItemId=content/aip/journal/adva
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1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
2. InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
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4. InGaN-based violet laser diodes
5. High-temperature ultraviolet detection based on InGaN Schottky photodiodes
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