InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3697415
Reference16 articles.
1. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
2. Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance
3. 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
4. 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
5. High conductive gate leakage current channels induced by In segregation around screw- and mixed-type threading dislocations in lattice-matched InxAl1−xN/GaN heterostructures
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4. Determination of Fermi Level Position at the Graphene/GaN Interface Using Electromodulation Spectroscopy;Advanced Materials Interfaces;2020-09-27
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