Nonalloyed Ohmic contacts ton‐GaAs by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90451
Reference7 articles.
1. Specific contact resistance of ohmic contacts to gallium arsenide
2. Film Deposition by Molecular-Beam Techniques
3. Impurity profiles of GaAs epitaxial layers doped with Sn, Si, and Ge grown with molecular beam epitaxy
4. Bonding direction and surface‐structure orientation on GaAs (001)
5. Contact Resistance and Contact Resistivity
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