Author:
Kobayashi H.,Kimura K.,Nishiyama F.,Miwa S.,Yao T.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
3 articles.
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1. Application of NRA to evaluation of boron implants in Si for shallow junctions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-05
2. Lattice location of Si in ion implanted GaN;Applied Physics Letters;1998-09-07
3. Doping limits in II–VI compounds — Challenges, problems and solutions;Progress in Crystal Growth and Characterization of Materials;1998-01