Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3533381
Reference20 articles.
1. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
2. GaN: Processing, defects, and devices
3. Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
4. Formation of thermally stable high‐resistivity AlGaAs by oxygen implantation
5. Implant activation and redistribution in AlxGa1−xAs
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