Formation of thermally stable high‐resistivity AlGaAs by oxygen implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99477
Reference6 articles.
1. Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE
2. Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1−xAs (0≤x≤0.40)
3. The relation of dominant deep levels in MOCVD AlxGa1−xAs with growth conditions
4. The electrical characteristics of ion implanted compound semiconductors
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