Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1−xAs (0≤x≤0.40)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332916
Reference21 articles.
1. Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE
2. Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAs
3. Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices
4. Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPE
5. Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
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