Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation
Author:
Affiliation:
1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2. Leibniz-Institut für Kristallzüchtung (IKZ), Max-Born-Straße 2, 12489 Berlin, Germany
Funder
Bundesministerium für Bildung und Forschung
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5046139
Reference43 articles.
1. Guest Editorial: The dawn of gallium oxide microelectronics
2. A review of Ga2O3materials, processing, and devices
3. High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
4. Conduction mechanism in highly doped β-Ga2O3$(\bar{2}01)$ single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
5. Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics
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