Conduction mechanism in highly doped β-Ga2O3$(\bar{2}01)$ single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=3/a=030305/pdf
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