The relation of dominant deep levels in MOCVD AlxGa1−xAs with growth conditions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique
2. Photoluminescence study of acceptors in AlxGa1−xAs
3. Photoluminescence of shallow acceptors in Al0.28Ga0.72As
4. Electron traps in bulk and epitaxial GaAs crystals
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