Implant activation and redistribution in AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345542
Reference31 articles.
1. Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors
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4. Doping of III–V compound semiconductors by ion implantation
5. Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors
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2. DLTS study of deep centers created by Ar-ion bombardment in n- and p-type MBE AlGaAs;The European Physical Journal Applied Physics;2004-07
3. Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes;Applied Physics Letters;2003-12-15
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