Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1634382
Reference28 articles.
1. Inversion behavior in Sc2O3/GaN gated diodes
2. Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes
3. The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
4. Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature
5. In-situ stress measurement during the ion implantation-induced doping of gallium nitride
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1. Increase in net donor concentration due to introduction of donor-like defects by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN;Applied Physics Express;2022-06-15
2. Novel Dielectrics for GaN Device Passivation and Improved Reliability;Materials and Reliability Handbook for Semiconductor Optical and Electron Devices;2012-08-23
3. Activation of ion implanted Si in GaN using a dual AlN annealing cap;Journal of Applied Physics;2009-02
4. Implantation temperature dependence of Si activation in AlGaN;Applied Physics Letters;2006-05
5. Electrical activation characteristics of silicon-implanted GaN;Journal of Applied Physics;2005-04-15
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