Implantation temperature dependence of Si activation in AlGaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2200283
Reference28 articles.
1. High-dose ion implantation into GaN
2. The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN
3. Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature
4. Damage to epitaxial GaN layers by silicon implantation
5. Electrical activation characteristics of silicon-implanted GaN
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2. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09
3. Quasi-Ballistic Transitions in AlGaN/SiC Heterojunction Bipolar Transistors;2020 5th International Conference on Devices, Circuits and Systems (ICDCS);2020-03
4. Crystal damage analysis of implanted AlxGa1-xN (0 ≤ x ≤ 1) by ion beam techniques;Surface and Coatings Technology;2018-12
5. Activation Studies of Si-Implanted Al0.45Ga0.55N by Using Cathodoluminescence and Temperature-Dependent Hall-Effect Measurements;Journal of the Korean Physical Society;2009-12-15
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