Activation Studies of Si-Implanted Al0.45Ga0.55N by Using Cathodoluminescence and Temperature-Dependent Hall-Effect Measurements
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Published:2009-12-15
Issue:6
Volume:55
Page:2465-2469
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ISSN:0374-4884
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Container-title:Journal of the Korean Physical Society
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language:en
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Short-container-title:J. Korean Phy. Soc.
Author:
Moore E. A.,Yeo Y. K.,Hengehold R. L.,Ryu Mee-Yi
Publisher
Korean Physical Society
Subject
General Physics and Astronomy