Instability of a GexSi1−xO2film on a GexSi1−xlayer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352211
Reference15 articles.
1. Novel oxidation process in Ge+‐implanted Si and its effect on oxidation kinetics
2. Formation of epitaxial layers of Ge on Si substrates by Ge implantation and oxidation
3. Oxidation studies of SiGe
4. Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation
5. Rapid thermal oxidation of GeSi strained layers
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3. Growth of Ge nanoparticles on SiO2/Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films;Thin Solid Films;2007-06
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