Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2multilayers-Reference-Cited by-同舟云学术

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Structure and infrared photoluminescence of GeSi nanocrystals formed by high temperature annealing of GeOx/SiO2multilayers

Published:2016-08-12 Issue:8 Volume:3 Page:085019
ISSN:2053-1591
Container-title:Materials Research Express
language:
Short-container-title:Mater. Res. Express

Author:

Volodin V A,Gambaryan M P,Cherkov A G,Stoffel M,Rinnert H,Vergnat M

Funder

Russian Foundation for Basic Research

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/2053-1591/3/i=8/a=085019/pdf

Reference48 articles.

1. A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties

2. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

3. Single-chip microprocessor that communicates directly using light

4. Optical gain in silicon nanocrystals

5. Silicon nanostructures for photonics and photovoltaics

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of GeSi islands in epitaxial Ge-on-Si during annealing;Applied Surface Science;2024-06

2. Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing;Technical Physics;2024-01

3. Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing;Vacuum;2022-03

4. Light sensitive memristors based on GeSixOy films with Ge nanoclusters;International Conference on Micro- and Nano-Electronics 2021;2022-01-31

5. Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters;Electronics;2020-12-10

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