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High electron mobility InN

Published:2007-04-16 Issue:16 Volume:90 Page:162103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jones R. E.,Li S. X.,Haller E. E.,van Genuchten H. C. M.,Yu K. M.,Ager J. W.,Liliental-Weber Z.,Walukiewicz W.,Lu H.,Schaff W. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2722693

Reference9 articles.

1. Structure and electronic properties of InN and In-rich group III-nitride alloys

2. Fermi-level stabilization energy in group III nitrides

3. Intrinsic limitations to the doping of wide-gap semiconductors

4. Native-defect-controlled n-type conductivity in InN

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3. Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications;Advanced Materials Interfaces;2022-03-25

4. High electron mobility in nearly-dislocation-free hexagonal InN;Applied Physics Express;2022-01-01

5. Influence of proton irradiation on carrier mobility in InN epitaxial layers;Thin Solid Films;2019-12

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