Nitrogen Radical Beam Irradiation on InN Film for Surface Modification
Author:
Affiliation:
1. Dept. of Electrical and Electronic Engineering, Ritsumeikan Univ.
Publisher
Society of Materials Science, Japan
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.jstage.jst.go.jp/article/jsms/71/10/71_824/_pdf
Reference14 articles.
1. 1) T. Araki, Y. Saito, T. Yamaguchi, M. Kurouchi, Y. Nanishi and H. Naoi, “Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties”, Journal of Vacuum Science and Technology B, Vol. 22, No. 4, pp. 2139-2143 (2004).
2. 2) C. J. Lu, L. A. Bendersky, H. Lu and W. J. Schaff, “Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer”, Applied Physics Letters, Vol. 83, No. 14, pp. 2817-2819 (2003).
3. 3) F. B. Abas, R. Fujita, S. Mouri, T. Araki and Y. Nanishi, “Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation”, Japanese Journal of Applied Physics, Vol. 57, No. 3, pp. 035502/1-4 (2018).
4. 4) T. Araki, F. B. Abas, R. Fujita, S. Mouri, “Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation”, Journal of the Society of Materials Science, Japan, Vol. 70, No. 10, pp. 732-737 (2021).
5. 5) S. Gangopadhyay, T. Schmidt, C. Kruse, S. Figge, D. Hommel and J. Falta, “Surface oxidation of GaN(0001): Nitrogen plasma-assisted cleaning for ultrahigh vacuum applications”, Journal of Vacuum Science & Technology A, Vol. 32, No. 5, pp. 051401/1-8 (2014).
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