Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=3/a=035502/pdf
Reference31 articles.
1. Unusual properties of the fundamental band gap of InN
2. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
3. Control of electron density in InN by Si doping and optical properties of Si-doped InN
4. Free-to-bound radiative recombination in highly conducting InN epitaxial layers
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1. Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates;physica status solidi (b);2023-05-25
2. Nitrogen Radical Beam Irradiation on InN Film for Surface Modification;Journal of the Society of Materials Science, Japan;2022-10-15
3. Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate;Fundamental Research;2021-12
4. Repeatability and Mechanisms of Threading Dislocation Reduction in InN Film Grown with In Situ Surface Modification by Radical Beam Irradiation;Journal of the Society of Materials Science, Japan;2021-10-15
5. Molecular beam epitaxy of InAlN alloys in the whole compositional range;AIP Advances;2020-01-01
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