Control of electron density in InN by Si doping and optical properties of Si-doped InN-Reference-Cited by-同舟云学术

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Control of electron density in InN by Si doping and optical properties of Si-doped InN

Published:2003-11 Issue:2 Volume:240 Page:417-420
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:phys. stat. sol. (b)

Author:

Higashiwaki M.,Inushima T.,Matsui T.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of adsorbed water in inducing electron accumulation in InN;Journal of Applied Physics;2019-12-14

2. Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation;Japanese Journal of Applied Physics;2018-02-07

3. Time-integrated photoluminescence and pump-probe reflection spectroscopy of Si doped InN thin films;Journal of Applied Physics;2014-01-28

4. Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy Conversion;Metallurgical and Materials Transactions A;2013-02-01

5. N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy;Journal of Applied Physics;2013-01-21

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