Native-defect-controlled n-type conductivity in InN-Reference-Cited by-同舟云学术

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Native-defect-controlled n-type conductivity in InN

Published:2006-04 Issue: Volume:376-377 Page:436-439
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Jones R.E.,Li S.X.,Hsu L.,Yu K.M.,Walukiewicz W.,Liliental-Weber Z.,Ager III J.W.,Haller E.E.,Lu H.,Schaff W.J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Fermi-level stabilization energy in group III nitrides

2. Band gaps of InN and group III nitride alloys

3. Effects of electron concentration on the optical absorption edge of InN

4. Amphoteric native defects in semiconductors

5. Intrinsic limitations to the doping of wide-gap semiconductors

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of proton irradiation on carrier mobility in InN epitaxial layers;Thin Solid Films;2019-12

2. Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN;Nano Letters;2018-08-23

3. Self-compensation in highly n-type InN;Applied Physics Letters;2012-07-02

4. Mg-induced terahertz transparency of indium nitride films;Applied Physics Letters;2011-12-05

5. Hybrid functional calculations of native point defects in InN;physica status solidi (a);2011-11-24

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