Rapid thermal chemical vapor deposition ofin situboron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications-Reference-Cited by-同舟云学术

Rapid thermal chemical vapor deposition ofin situboron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

Published:1997-12-08 Issue:23 Volume:71 Page:3388-3390
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li V. Z-Q,Mirabedini M. R.,Kuehn R. T.,Wortman J. J.,Öztürk M. C.,Batchelor D.,Christensen K.,Maher D. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.120344

Reference11 articles.

1. Junction Formation and Poly‐Si Doping for Scaled Sub‐Micron CMOS Technology

2. Rapid Thermal Chemical Vapor Deposition of Germanium and Germanium/Silicon Alloys on Silicon: New Applications in the Fabrication of MOS Transistors

3. Low Pressure Chemical Vapor Deposition of Si1 − x Ge x Films on SiO2 : Characterization and Modeling

4. Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition

5. Effects of SiH4, GeH4, and B 2 H 6 on the Nucleation and Deposition of Polycrystalline Si1 − x Ge x Films

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