Low-Stress Highly-Conductive In-Situ Boron Doped Ge0.7Si0.3Films by LPCVD
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference29 articles.
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1. A review on single crystal and thin film Si–Ge alloy: growth and applications;Materials Advances;2022
2. Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices;Journal of Nanomaterials;2015
3. Deep reactive ion etching of in situ boron doped LPCVD Ge0.7Si0.3 using SF6 and O2 plasma;Microelectronic Engineering;2013-10
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