The role of carbon on the electrical properties of polycrystalline Si1−yCy and Si0.82−yGe0.18Cy films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1343896
Reference25 articles.
1. Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's
2. Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment
3. Effects of Ge on Material and Electrical Properties of Polycrystalline Si1 − x Ge x for Thin‐Film Transistors
4. Deposition and Properties of Low‐Pressure Chemical‐Vapor Deposited Polycrystalline Silicon‐Germanium Films
5. Optimization of silicon-germanium TFT's through the control of amorphous precursor characteristics
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Boron segregation and electrical properties in polycrystalline Si1−x−yGexCy and Si1−yCy alloys;Journal of Applied Physics;2004-04-15
2. Bibliography;Silicon-Germanium Strained Layers and Heterostructures;2003
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