Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition-Reference-Cited by-同舟云学术

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Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition

Published:1995-04-03 Issue:14 Volume:66 Page:1809-1811
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Julie A.,Reif Rafael

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.113329

Reference11 articles.

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin films on silicon;Handbook of Silicon Based MEMS Materials and Technologies;2020

2. Thin Films on Silicon;Handbook of Silicon Based MEMS Materials and Technologies;2015

3. Photon energy dependence of crystallization of Si1−xGexfilms by soft X-ray irradiation;Japanese Journal of Applied Physics;2014-10-16

4. Introduction;Poly-SiGe for MEMS-above-CMOS Sensors;2013-07-18

5. Crystallization of Si1-xGexMultilayer by Soft X-ray Irradiation;Applied Physics Express;2013-06-01

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