Effects of atomic hydrogen on the selective area growth of Si and Si[sub 1−x]Ge[sub x] thin films on Si and SiO[sub 2] surfaces: Inhibition, nucleation, and growth-Reference-Cited by-同舟云学术

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Effects of atomic hydrogen on the selective area growth of Si and Si[sub 1−x]Ge[sub x] thin films on Si and SiO[sub 2] surfaces: Inhibition, nucleation, and growth

Published:2004 Issue:3 Volume:22 Page:578
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Schroeder T. W.,Lam A. M.,Ma P. F.,Engstrom J. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetic study on heterogeneous nucleation and incubation period during chemical vapor deposition;The Journal of Chemical Physics;2023-03-22

2. Area-Selective Deposition of AlO_x and Al-Silicate for Fully Self-Aligned Via Integration;ACS Applied Materials & Interfaces;2023-01-17

3. Selective Growth and Contact Gap-Fill of Low Resistivity Si via Microwave Plasma-Enhanced CVD;Micromachines;2019-10-12

4. Initial nucleation stage in photo-CVD of GeH4 on SiO2 substrate monitored by real-time spectroscopic ellipsometry and photo reflectance: Accurate determination of incubation time;Journal of Vacuum Science & Technology A;2018-07

5. Use of molecular beams for kinetic measurements of chemical reactions on solid surfaces;Surface Science Reports;2017-05

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