Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties-Reference-Cited by-同舟云学术

Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

Published:2018-01 Issue:1 Volume:8 Page:015316
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Jian Guangzhong¹²³,He Qiming¹²,Mu Wenxiang⁴,Fu Bo⁴,Dong Hang¹²³,Qin Yuan¹²³,Zhang Ying¹²³^ORCID,Xue Huiwen¹,Long Shibing¹²³,Jia Zhitai⁴⁵,Lv Hangbing¹²³,Liu Qi¹²³^ORCID,Tao Xutang⁴,Liu Ming¹²³

Affiliation:

1. Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210023, China

4. State Key Laboratory of Crystal Materials, Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan 250100, China

5. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Funder

Beijing Training Project for the Leading Talents in S&T

Key Research Program of Frontier Sciences of Chinese Academy of Sciences

Young Scholars Program of Shandong University

National Natural Science Foundation of China

Ministry of Science and Technology of the People's Republic of China

Publisher

AIP Publishing