Critical layer thickness in strained Ga1−xInxAs/InP quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102231
Reference17 articles.
1. Electronic energy levels inInxGa1−xAs/InP strained-layer superlattices
2. Type-I to type-II superlattice transition in strained layers ofInxGa1−xAs grown on InP
3. Strained‐layer Ga1−xInxAs/InP avalanche photodetectors
4. Effects of coherency strain on the band gap of pseudomorphic InxGa1−xAs on (001) InP
5. Excitonic transitions in lattice-matchedGa1−xInxAsInPquantum wells
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