Dark current mechanisms in quantum dot laser structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3596524
Reference22 articles.
1. 1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density
2. Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum wellp–i–ndiodes
3. Critical layer thickness in strained Ga1−xInxAs/InP quantum wells
4. Effect of misfit dislocations on leakage currents in strained multiquantum well structures
5. p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency
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1. Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate;Microelectronics Reliability;2021-11
2. Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers;IEEE Journal of Quantum Electronics;2019-06
3. Electrical Characterization of Commercial GaN LEDs Subjected to Electron Radiation with Different Conveyor Speed per Pass;2016 International Conference on Computer and Communication Engineering (ICCCE);2016-07
4. Neutron Radiation Effects on the Electrical Characteristics of InAs/GaAs Quantum Dot-in-a-Well Structures;IEEE Transactions on Nuclear Science;2015-12
5. Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon;IEEE Journal of Selected Topics in Quantum Electronics;2015-11
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