Excitonic transitions in lattice-matchedGa1−xInxAsInPquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.7870/fulltext
Reference22 articles.
1. Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition
2. GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
3. InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition
4. GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy
5. High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy
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1. Geometry-induced localization phenomena in semiconductor quantum-dot heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2005-09
2. Photocurrent spectra and Wannier–Stark localization of In0.53Ga0.47As/InP superlattices with different barrier thicknesses;Microelectronic Engineering;2000-05
3. Material parameters of InGaAsP and InAlGaAs systems for use in quantum well structures at low and room temperatures;Physica E: Low-dimensional Systems and Nanostructures;2000-03
4. Observation of strong biexcitonic luminescence in ZnMgSe/ZnSe single quantum well;Solid State Communications;1999-08
5. Observation of Landau levels and excitons at room temperature inIn0.53Ga0.47As/InPquantum wells;Physical Review B;1998-05-15
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