Polarity replication across m-plane GaN/ZnO interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3659008
Reference22 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
3. Substrate‐polarity dependence of metal‐organic vapor‐phase epitaxy‐grown GaN on SiC
4. Polarity control of GaN grown on ZnO (0001¯) surfaces
5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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1. Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy;Nanotechnology;2017-09-13
2. Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes;The Journal of Physical Chemistry C;2015-01-26
3. Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target;Science of Advanced Materials;2014-06-01
4. Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO;Applied Physics Letters;2013-11-04
5. DFT Study for Growth of m-Plane GaN/ZnO Interfaces;e-Journal of Surface Science and Nanotechnology;2012
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