Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4829478
Reference19 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Radiation and polarization properties of free-exciton emission from AlN (0001) surface
3. Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)
4. 222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties
5. Growth of nonpolar AlN (112¯0) and (11¯00) films on SiC substrates by flow-rate modulation epitaxy
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2. Self-Assembly Semipolar AlN Nanopyramids Grown on Powder-Compressed AlN Substrates;physica status solidi (a);2017-10-05
3. GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices;IEICE Transactions on Electronics;2017
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