Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes-Reference-Cited by-同舟云学术

Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes

Published:2015-01-26 Issue:5 Volume:119 Page:2798-2803
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang Dengkui¹²,Wang Fei¹,Wang Yunpeng¹,Fan Yi¹,Zhao Bin¹²,Zhao Dongxu¹

Affiliation:

1. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun 130021, People’s Republic of China

2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp509655j

Reference40 articles.

1. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

2. Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

3. The future of ZnO light emitters

4. Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes

5. Near ultraviolet light emitting diode composed of n-GaN∕ZnO coaxial nanorod heterostructures on a p-GaN layer

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