Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632537
Reference19 articles.
1. Recent advances in ZnO materials and devices
2. Near-UV emitting diodes based on a transparent p–n junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno
3. Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
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