The redistribution of implanted dopants after metal‐silicide formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324599
Reference19 articles.
1. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
2. Increasing the effective height of a Schottky barrier using low‐energy ion implantation
3. Low-power bipolar transistor memory cells
4. Analysis of thin-film structures with nuclear backscattering and x-ray diffraction
5. Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
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