Redistribution of phosphorus during NiPtSi formation on in-situ doped Si-Reference-Cited by-同舟云学术

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Redistribution of phosphorus during NiPtSi formation on in-situ doped Si

Published:2018-12 Issue: Volume:202 Page:25-30
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lemang M.,Rodriguez Ph.,Grégoire M.,Juhel M.,Saidi B.,Gergaud P.,Nemouchi F.,Mangelinck D.

Funder

French National Research Agency (ANR)

Nano2017 project

STMicroelectronics-LETI

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. NiSi salicide technology for scaled CMOS;Iwai;Microelectron. Eng.,2002

2. Towards implementation of a nickel silicide process for CMOS technologies;Lavoie;Microelectron. Eng.,2003

3. Effects of additive elements on the phase formation and morphological stability of nickel monosilicide films;Lavoie;Microelectron. Eng.,2006

4. Enhancement of thermal stability of NiSi films on (100) Si and (111) Si by Pt addition;Mangelinck;Appl. Phys. Lett.,1999

5. The redistribution of implanted dopants after metal silicide formation;Wittmer;J. Appl. Phys.,1978

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