Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)-Reference-Cited by-同舟云学术

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Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

Published:2018-02 Issue: Volume:140 Page:41-45
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kim Sihyun,Kwon Dae Woong,Park Euyhwan,Lee Junil,Lee Roongbin,Lee Jong-Ho,Park Byung-Gook

Funder

Ministry of Trade, Industry and Energy (MOTIE)

Korea Semiconductor Research Consortium (KSRC)

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Silicon surface tunnel transistor;Reddick;Appl Phys Lett,1995

2. Vertical tunnel field effect transistor;Bhuwalka;IEEE Trans Electron Devices,2004

3. Appenzeller J, Lin YM, Knoch J, Avouris P. Band-to-band tunneling in carbon nanotube field effect transistors. Phys Rev Lett 2004;93(19):196 805(1–3).

4. Tunneling field effect transistors (TFETs) with subthreshold swing (SS) less than 60 mv/dec;Choi;IEEE Electron Device Lett,2007

5. The tunnel source (PNPN) n-MOSFET: a novel high performance transistor;Nagavarapu;IEEE Trans Electron Devices,2008

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Device and circuit level performance assessments of gate engineered Ge/GaAs heterojunction doping less TFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-09-29

2. Gate-First Negative Capacitance Field-Effect Transistor With Self-Aligned Nickel-Silicide Source and Drain;IEEE Transactions on Electron Devices;2021-09

3. LTPS TFTs with an Amorphous Silicon Buffer Layer and Source/Drain Extension;Electronics;2020-12-28

4. Design and investigation of dopingless dual-gate tunneling transistor based on line tunneling;AIP Advances;2019-04

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