Design and investigation of dopingless dual-gate tunneling transistor based on line tunneling-Reference-Cited by-同舟云学术

Design and investigation of dopingless dual-gate tunneling transistor based on line tunneling

Published:2019-04 Issue:4 Volume:9 Page:045109
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Li Wei¹,Liu Hongxia¹,Wang Shulong¹,Chen Shupeng¹,Han Tao¹,Yang Kun¹

Affiliation:

1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China

Funder

111 Project

Foundation for Fundamental Research of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5087879

Reference30 articles.

1. Effect of Drain Doping Profile on Double-Gate Tunnel Field-Effect Transistor and its Influence on Device RF Performance

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

4. Short-channel effect in fully depleted SOI MOSFETs

5. Characteristics and limitation of scaled-down MOSFET's due to two-dimensional field effect

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