Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe
Author:
Funder
Japan Science and Technology Agency
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FD05/pdf
Reference32 articles.
1. Low-subthreshold-swing tunnel transistors
2. Low-Voltage Tunnel Transistors for Beyond CMOS Logic
3. Tunnel field-effect transistors as energy-efficient electronic switches
4. Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
5. Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
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1. Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance*;Chinese Physics B;2020-10-01
2. Selective Epitaxial Growth of In Situ Doped SiGe on Bulk Ge for p+/n Junction Formation;Electronics;2020-03-29
3. (Invited) Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies;ECS Transactions;2018-07-20
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