Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications-Reference-Cited by-同舟云学术

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Published:2008-05-15 Issue:10 Volume:103 Page:104504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Toh Eng-Huat,Wang Grace Huiqi,Samudra Ganesh,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2924413

Reference7 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. Complementary tunneling transistor for low power application

3. The tunneling field effect transistor (TFET) as an add-on for ultra-low-voltage analog and digital processes

4. A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET

Cited by 157 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Different TFETs;Integrated Devices for Artificial Intelligence and VLSI;2024-07-31

2. GaAs-on-insulator based vertical heterojunction tunnel FET: proposal and analysis for VLSI circuit applications;Physica Scripta;2024-07-24

3. Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments;Microsystem Technologies;2024-05-02

4. Mole Fraction and Device Reliability Analysis of Vertical-Tunneling-Attributed Dual-Material Double-Gate Heterojunction-TFET with Si0.7Ge0.3 Source Region at Device and Circuit Level;Journal of Circuits, Systems and Computers;2024-02-21

5. Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection;Nanomaterials;2024-01-19