A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET-Reference-Cited by-同舟云学术

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A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET

Published:2005-07 Issue:7 Volume:52 Page:1541-1547
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Bhuwalka K.K.,Schulze J.,Eisele I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/31407/01459117.pdf?arnumber=1459117

Cited by 105 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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5. Investigating the effects of doping gradient, trap charges, and temperature on Ge vertical TFET for low power switching and analog applications;Materials Science and Engineering: B;2024-01

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