Investigating the effects of doping gradient, trap charges, and temperature on Ge vertical TFET for low power switching and analog applications
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference77 articles.
1. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011
2. Tunnel field-effect transistors: Prospects and challenges;Avci;IEEE J. Electron Devices Soc.,2015
3. Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/Si x Ge1-x-ySn y heterostructure model for low power FET applications;Elogail;Semicond. Sci. Technol.,2018
4. Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization;Toh;Appl. Phys. Lett.,2007
5. A Ge Ultrathin-Body n-Channel Tunnel FET: Effects of Surface Orientation;Alam;IEEE Trans. Electron Devices,2014
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Design, optimization, and performance analysis of GaP/Si heterojunction Fin-TFET with MoS2 nanoribbon channel;Micro and Nanostructures;2024-06
2. Implementation of a Boolean function with a double-gate vertical TFET (DGVTFET) using numerical simulations;Journal of Computational Electronics;2024-05-23
3. Performance and reliability assessment of source work function engineered charge plasma based Ti/HfO2/Al2O3/Ge, double gate TFET;Engineering Research Express;2024-05-03
4. Influence of charge traps on charge plasma-germanium double-gate TFET for RF/Analog & low-power switching applications;Microelectronics Reliability;2024-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3