Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2748366
Reference9 articles.
1. Complementary tunneling transistor for low power application
2. Proceedings of the Devices Research Conference;Bhuwalka K. K.,2004
3. A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET
4. Low-subthreshold-swing tunnel transistors
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