Analysis of III–V Heterojunction TFET for High-Frequency Analog Applications
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s11664-024-11261-z.pdf
Reference37 articles.
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5. A.S. Verhulst, W.G. Vandenberghe, K. Maex, S. De Gendt, M.M. Heyns, and G. Groeseneken, Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates. IEEE Electron Device Lett. 29, 12 (2008).
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