Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1426275
Reference10 articles.
1. Low-pressure metal organic chemical vapor deposition of GaN on silicon(111) substrates using an AlAs nucleation layer
2. Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001)
3. Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy
4. Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN
5. The Role of Growth Rates and Buffer Layer Structures for Quality Improvement of Cubic GaN Grown on GaAs
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1. Characterization of semi-polar GaN on GaAs substrates;Journal of Crystal Growth;2015-02
2. Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations;Journal of Applied Physics;2008-05
3. Tilt growth of MnAs on the GaAs(001) substrate;Physics Letters A;2007-07
4. Tilt growth of the epilayer with large lattice mismatch to the substrate;The European Physical Journal Applied Physics;2007-05-30
5. Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells;MRS Proceedings;2003
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