Tilt growth of MnAs on the GaAs(001) substrate
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference18 articles.
1. Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate
2. Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase epitaxy using AlAs intermediate layers
3. Asymmetric tilt boundaries and generalized heteroepitaxy
4. Film/Substrate Orientation Relationship in theAIN/6H-SiC Epitaxial System
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural and micromechanical analyses by polarized Raman spectroscopy of wurtzitic GaN films grown on (0001) sapphire substrates;Journal of Applied Physics;2012-09
2. Raman tensor elements for wurtzitic GaN and their application to assess crystallographic orientation at film/substrate interfaces;Journal of Applied Physics;2011-07
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